90512 tkim/21805ea tsim tb-00000664 no.8123-1/6 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2sa2153 bipolar transistor -50v, -2a, low vce(sat), pnp single pcp applicaitons ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of mbit process ? low saturation voltage ? large current capacity and wide aso speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --50 v collector-to-emitter voltage v ceo --50 v emitter-to-base voltage v ebo -- 6 v collector current i c -- 2 a collector current (pulse) i cp -- 4 a base current i b --400 ma continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : EN8123A product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sa2153-td-e az lot no. 2 3 1
2sa2153 no.8123-2/6 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c when mounted on ceramic substrate (450mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =--40v, i e =0a --1 a emitter cutoff current i ebo v eb =--4v, i c =0a --1 a dc current gain h fe 1v ce =--2v, i c =--100ma 200 560 h fe 2v ce =--2v, i c =--1.5a 40 gain-bandwidth product f t v ce =--10v, i c =--300ma 420 mhz output capacitance cob v cb =--10v, f=1mhz 16 pf collector-to-emitter saturation voltage v ce (sat) i c =--1a, i b =--50ma --0.2 --0.4 v base-to-emitter saturation voltage v be (sat) i c =--1a, i b =--50ma --0.9 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 a, i e =0a --50 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --50 v emitter-to-base breakdown voltage v (br)ebo i e =--10 a, i c =0a --6 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 200 ns fall time t f 24 ns switching time test circuit ordering information device package shipping memo 2sa2153-td-e pcp 1,000pcs./reel pb free v r r l v cc = --25v v be =5v i c =10i b1 = --10i b2 = --700ma + + 50 input output r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% i c i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a it08346 -- 2 . 0 -- 1 . 8 -- 1 . 6 -- 1 . 4 -- 1 . 2 -- 1 . 0 -- 0 . 8 -- 0 . 4 -- 0 . 2 -- 0 . 6 0 0 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a it08347 0 --2.0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 0 -- 1 . 2 -- 1 . 4 -- 1 . 6 -- 1 . 8 0 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 0 -- 1 . 2 -- 1 . 4 -- 1 . 6 -- 1 . 8 -- 2 . 0 i b =0ma --50ma --40ma --30ma --20ma --10ma --5ma --4ma --3ma --2ma --1ma --60ma v ce = --2v ta=75 c 25 c --25 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sa2153 no.8123-3/6 -- 0 . 1 -- 1 . 0 -- 1 0 23 57 23 57 --100 23 57 5 7 7 5 3 2 10 collector-to-base voltage, v cb -- v output capacitance, cob -- pf it08350 cob -- v cb -- 0 . 1 --0.01 7 5 3 2 -- 1 . 0 7 55 3 23 2 v be (sat) -- i c collector current, i c -- a it08351 -- 1 . 0 2 3 5 7 2 3 it08352 -- 0 . 1 --0.01 7 5 335 22 -- 1 . 0 7 5 3 2 v ce (sat) -- i c collector current, i c -- a -- 0 . 1 -- 1 . 0 --0.01 2 3 5 7 2 3 5 7 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c 1.4 0.2 0 160 20 0 it08354 a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v -- 0 . 1 23 57 -- 1 . 0 23 57 -- 1 0 23 57 it08353 -- 0 . 1 2 3 5 7 -- 1 . 0 2 3 5 5 7 7 --0.01 3 2 0.4 0.6 0.8 1.0 1.2 1.3 40 60 80 100 120 140 ta=75 c 25 c --25 c i c / i b =20 i c / i b =20 f=1mhz ta= --25 c 25 c 75 c p c -- tc collector dissipation, p c -- w case temperature, tc -- c 4.0 0.5 0 160 20 0 it08355 40 60 80 1.0 1.5 2.0 2.5 3.0 3.5 100 120 140 dc operation i c = --2a i cp = --4a 500 s 1ms 100ms < 10 s 10ms 100 s collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v tc=25 c single pulse mounted on a ceramic board (450mm 2 ? 0.8mm) h fe -- i c collector current, i c -- a dc current gain, h fe it08348 it08349 2 3 5 7 2 100 3 5 7 --0.01 3 25 -- 0 . 1 73 3 22 55 7 -- 1 . 0 ta=75 c 25 c --25 c v ce = --2v --0.01 --0.1 --1.0 23 5 5 5 77 22 33 2 3 5 5 7 7 100 1000 collector current, i c -- a gain-bandwidth product, f t -- mhz f t -- i c v ce = --10v
2sa2153 no.8123-4/6 embossed taping speci cation 2sa2153-td-e
2sa2153 no.8123-5/6 outline drawing land pattern example 2sa2153-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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